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RAMON CHIPS has developed unique technology for implementing Rad-Hard By Design (RHBD) electronic components. The technology and Intellectual Property cores were tested for radiation immunity, and passed in excess of 300 Krad(Si) TID and 100 MeV/(mg/cm2) SEL and SEU tests, rendering the technology suitable for LEO, GEO and outer space applications. Devices are qualified to either Class Level S or a proprietary LEO level.

 
 

RADIC1

 

 

 

 

RADIC1
180nm
Test IC

RADIC3
180nm
Test IC

RMIC02 180nm
Controller

RADIC4
130nm
Test IC

RADIC5
130nm
SERDES test
RADIC6
65nm
Test IC 
VHiSSI
130nm
SpFi

GR702RC
180nm
LEON3FT

JPIC
JPEG2000 Compression
180nm

GR712RC
dual-core LEON3FT
180nm

 

Silicon proven Ramon Chips proprietary technology components include:

  • RadSafe™/Cell Libraries - 0.18μ, 0.13μ and 65nm CMOS ASIC standard cell libraries (logic and I/O), radiation hardened, operating on a range of supply voltages. A proprietary RHBD layout concept provides very high immunity to radiation, while maintaining high density and low power. Use of standard commercial CMOS technology enables high performance, low power, high reliability and high availability products.

  • RadSafe™/Flow - ASIC design infrastructure that enables automatic conversion of any ASIC or FPGA design (in VHDL or VERILOG) into a rad-hard product.

  • RadSafe™/SRAM – Rad-hard SRAM cores, achieving high speed at very low power, ranging from 8Kbit to 4Mbit. Optional built-in EDAC circuits enhance SEU protection of the SRAM cores.

  • RadSafe™/DLL - Rad-hard all-digital Delay Locked Loop cores, offering a wide range of frequencies, frequency multiplication, phase alignment and multi-phase generation, at very low jitter and power.

 
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